A non-destructive channel stress characterization for gate-all-around nanosheet transistors by confocal Raman methodologyZiqiang Huang, Tao Liu, Jingwen Yang, Xin Sun, Kun Chen, Dawei Wang, Hailong Hu, Min Xu, Chen Wang, Saisheng Xu and David Wei ZhangNatl Sci Open, 2 2 (2023) 20220027DOI: https://doi.org/10.1360/nso/20220027
