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A non-destructive channel stress characterization for gate-all-around nanosheet transistors by confocal Raman methodology

Ziqiang Huang, Tao Liu, Jingwen Yang, Xin Sun, Kun Chen, Dawei Wang, Hailong Hu, Min Xu, Chen Wang, Saisheng Xu and David Wei Zhang

Natl Sci Open, 2 2 (2023) 20220027

Published online: 23 September 2022

DOI: 10.1360/nso/20220027

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National Science Open (NSO)

Editor-in-Chief: Yue Zhang - Editorial board
ISSN: 2097-1168 - e-ISSN: 2097-1400 - CN: CN10-1767/N
nso@scichina.org

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