Natl Sci Open
Volume 2, Number 1, 2023
|Number of page(s)||11|
|Published online||03 January 2023|
Unconventional ferroelectricity in half-filling states of antiparallel stacking of twisted WSe2
Department of Physics and Center for Quantum Materials, the Hong Kong University of Science and Technology, Hong Kong, China
2 William Mong Institute of Nano Science and Technology, the Hong Kong University of Science and Technology, Hong Kong, China
3 Department of Physics, University of Hong Kong, Hong Kong, China
Corresponding authors (emails: email@example.com (Ning Wang); firstname.lastname@example.org (Junwei Liu))
Revised: 7 September 2022
Accepted: 12 September 2022
We report on emergence of an abnormal electronic polarization in twisted double bilayer WSe2 in antiparallel interface stacking geometry, where local centrosymmetry of atomic registries at the twist interface does not favor the spontaneous electronic polarizations as recently observed in the parallel interface stacking geometry. The unconventional ferroelectric behaviors probed by electronic transport measurement occur at half filling insulating states at 1.5 K and gradually disappear at about 40 K. Single band Hubbard model based on the triangular moiré lattice and the interlayer charge transfer controlled by insulating phase transition are proposed to interpret the formation of electronic polarization states near half filling in twisted WSe2 devices. Our work highlights the prominent role of many-body electronic interaction in fostering novel quantum states in moiré-structured systems.
Key words: two-dimensional semiconductor / twist moiré / ferroelectricity / electron interaction / electronic transport
© The Author(s) 2023. Published by China Science Publishing & Media Ltd. and EDP Sciences.
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