RESEARCH ARTICLE

Halide vapor phase epitaxy of monolayer molybdenum diselenide single crystals

¹ National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
² National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
³ School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, China
⁴ College of Material Science and Engineering, Nanjing Tech University, Nanjing 201110, China
⁵ School of Integrated Circuits, Nanjing University, Suzhou 215163, China
⁶ Suzhou Laboratory, Suzhou 215000, China

^* Corresponding authors (emails: ttli@nju.edu.cn (Taotao Li); xrwang@nju.edu.cn (Xinran Wang))

Received: 4 October 2022
Revised: 7 December 2022
Accepted: 29 December 2022

Abstract

Single-crystalline transition metal dichalcogenides (TMD) films are of potential application in future electronics and optoelectronics. In this work, a halide vapor phase epitaxy (HVPE) strategy was proposed and demonstrated for the epitaxy of molybdenum diselenide (MoSe₂) single crystals, in which metal halide vapors were in-situ produced by the chlorination of molybdenum as sources for the TMD growth. Combined with the epitaxial sapphire substrate, unidirectional domain alignment was successfully achieved and monolayer single-crystal MoSe₂ films have been demonstrated on a 2-inch wafer for the first time. A series of characterizations ranging from centimeter to nanometer scales have been implemented to demonstrate the high quality and uniformity of the MoSe₂. This work provides a universal strategy for the growth of TMD single-crystal films.