Download original image
Techniques for epitaxial growth of III-V on Si platforms. (A) GaAs on an off-cut (2°, 4° or 6°) Si (001) substrates by MBE . (B) GaAs on “V”-groove patterned Si (001) substrates by MOCVD . (C) GaAs on Si (001) substrates with an AlGaAs nucleation layer by MBE . (D) GaAs on the Si (001) substrates with double-atomic steps, produced by annealing the substrate in H2 atmosphere in MOCVD .
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.