Figure 6


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Techniques for epitaxial growth of III-V on Si platforms. (A) GaAs on an off-cut (2°, 4° or 6°) Si (001) substrates by MBE [90]. (B) GaAs on “V”-groove patterned Si (001) substrates by MOCVD [91]. (C) GaAs on Si (001) substrates with an AlGaAs nucleation layer by MBE [88]. (D) GaAs on the Si (001) substrates with double-atomic steps, produced by annealing the substrate in H2 atmosphere in MOCVD [92].

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