Figure 7
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High-quality GaAs layers grown on Si (001) substrates. (A), (B), and (C) Cross-sectional SEM images of the “U”-shaped patterned Si (001), (111)-faceted silicon hollow substrate, and the GaAs/Si (001) substrate, respectively. (D), (E), and (F) Cross-sectional TEM image of the GaAs/Si interface, surface AFM and ECCI images of the GaAs/Si (001) sample, indicating a 1.3 nm RMS (root-mean-square) and a 4.8×106 cm−2 threading dislocation density.
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