Real- and momentum-indirect neutral and charged excitons in a multi-valley semiconductor

Special Topic: Two-dimensional Materials and Devices

Open Access

Issue		Natl Sci Open Volume 2, Number 4, 2023 Special Topic: Two-dimensional Materials and Devices


Article Number		20220060
Number of page(s)		10
Section		Physics
DOI		https://doi.org/10.1360/nso/20220060
Published online		09 June 2023

Wang G, Chernikov A, Glazov MM, et al. Colloquium: Excitons in atomically thin transition metal dichalcogenides. Rev Mod Phys 2018; 90: 021001. [Article] [NASA ADS] [CrossRef] [Google Scholar]
Mak KF, Shan J. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides. Nat Photon 2016; 10: 216-226. [Article] [NASA ADS] [CrossRef] [Google Scholar]
Withers F, Del Pozo-Zamudio O, Mishchenko A, et al. Light-emitting diodes by band-structure engineering in van der Waals heterostructures. Nat Mater 2015; 14: 301-306. [Article] [CrossRef] [PubMed] [Google Scholar]
Wu S, Buckley S, Schaibley JR, et al. Monolayer semiconductor nanocavity lasers with ultralow thresholds. Nature 2015; 520: 69-72. [Article] [NASA ADS] [CrossRef] [PubMed] [Google Scholar]
Baugher BWH, Churchill HOH, Yang Y, et al. Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide. Nat Nanotech 2014; 9: 262-267. [Article] [NASA ADS] [CrossRef] [PubMed] [Google Scholar]
Ciarrocchi A, Tagarelli F, Avsar A, et al. Excitonic devices with van der Waals heterostructures: valleytronics meets twistronics. Nat Rev Mater 2022; 7: 449-464. [Article] [NASA ADS] [CrossRef] [Google Scholar]
Chakraborty SK, Kundu B, Nayak B, et al. Challenges and opportunities in 2D heterostructures for electronic and optoelectronic devices. iScience 2022; 25: 103942. [Article] [NASA ADS] [CrossRef] [PubMed] [Google Scholar]
Jin C, Ma EY, Karni O, et al. Ultrafast dynamics in van der Waals heterostructures. Nat Nanotech 2018; 13: 994-1003. [Article] [NASA ADS] [CrossRef] [PubMed] [Google Scholar]
Rivera P, Yu H, Seyler KL, et al. Interlayer valley excitons in heterobilayers of transition metal dichalcogenides. Nat Nanotech 2018; 13: 1004-1015. [Article] [NASA ADS] [CrossRef] [Google Scholar]
Mak KF, Shan J. Opportunities and challenges of interlayer exciton control and manipulation. Nat Nanotech 2018; 13: 974-976. [Article] [NASA ADS] [CrossRef] [Google Scholar]
Islam MN, Hillman RL, Miller DAB, et al. Electroabsorption in GaAs/AlGaAs coupled quantum well waveguides. Appl Phys Lett 1987; 50: 1098-1100. [Article] [NASA ADS] [CrossRef] [Google Scholar]
Rivera P, Schaibley JR, Jones AM, et al. Observation of long-lived interlayer excitons in monolayer MoSe₂-WSe₂ heterostructures. Nat Commun 2015; 6: 6242[Article] [NASA ADS] [CrossRef] [PubMed] [Google Scholar]
Miller B, Steinhoff A, Pano B, et al. Long-lived direct and indirect interlayer excitons in van der Waals heterostructures. Nano Lett 2017; 17: 5229-5237. [Article] [NASA ADS] [CrossRef] [PubMed] [Google Scholar]
Jauregui LA, Joe AY, Pistunova K, et al. Electrical control of interlayer exciton dynamics in atomically thin heterostructures. Science 2019; 366: 870-875. [Article] [NASA ADS] [CrossRef] [PubMed] [Google Scholar]
Wang Z, Rhodes DA, Watanabe K, et al. Evidence of high-temperature exciton condensation in two-dimensional atomic double layers. Nature 2019; 574: 76-80. [Article] [NASA ADS] [CrossRef] [PubMed] [Google Scholar]
Li JIA, Taniguchi T, Watanabe K, et al. Excitonic superfluid phase in double bilayer graphene. Nat Phys 2017; 13: 751-755. [Article] [NASA ADS] [CrossRef] [Google Scholar]
Fogler MM, Butov LV, Novoselov KS. High-temperature superfluidity with indirect excitons in van der Waals heterostructures. Nat Commun 2014; 5: 4555. [Article] [NASA ADS] [CrossRef] [PubMed] [Google Scholar]
Liu X, Watanabe K, Taniguchi T, et al. Quantum Hall drag of exciton condensate in graphene. Nat Phys 2017; 13: 746-750. [Article] [CrossRef] [Google Scholar]
Ma L, Nguyen PX, Wang Z. Strongly correlated excitonic insulator in atomic double layers. Nature 2021; 598: 585-589[Article] [CrossRef] [PubMed] [Google Scholar]
Zhang Z, Regan EC, Wang D. Correlated interlayer exciton insulator in heterostructures of monolayer WSe₂ and Moiré WS₂/WSe₂. Nat Phys 2022; 18: 1214-1220[Article] [NASA ADS] [CrossRef] [Google Scholar]
Chen D, Lian Z, Huang X. Excitonic insulator in a heterojunction moiré superlattice. Nat Phys 2022; 18: 1171-1176[Article] [NASA ADS] [CrossRef] [Google Scholar]
Unuchek D, Ciarrocchi A, Avsar A, et al. Room-temperature electrical control of exciton flux in a van der Waals heterostructure. Nature 2018; 560: 340-344. [Article] [NASA ADS] [CrossRef] [PubMed] [Google Scholar]
Zhao Y, Du L, Yang S, et al. Interlayer exciton complexes in bilayer MoS₂. Phys Rev B 2022; 105: L041411. [Article] [CrossRef] [Google Scholar]
Huang Z, Zhao Y, Bo T, et al. Spatially indirect intervalley excitons in bilayer WSe₂. Phys Rev B 2022; 105: L041409. [Article] [NASA ADS] [CrossRef] [Google Scholar]
Altaiary MM, Liu E, Liang CT, et al. Electrically switchable intervalley excitons with strong two-phonon scattering in bilayer WSe₂. Nano Lett 2022; 22: 1829-1835. [Article] [Google Scholar]
Rivera P, Seyler KL, Yu H, et al. Valley-polarized exciton dynamics in a 2D semiconductor heterostructure. Science 2016; 351: 688-691. [Article] [NASA ADS] [CrossRef] [PubMed] [Google Scholar]
Arora A, Drüppel M, Schmidt R, et al. Interlayer excitons in a bulk van der Waals semiconductor. Nat Commun 2017; 8: 639. [Article] [NASA ADS] [CrossRef] [PubMed] [Google Scholar]
Jin C, Regan EC, Wang D, et al. Identification of spin, valley and moiré quasi-angular momentum of interlayer excitons. Nat Phys 2019; 15: 1140-1144. [Article] [CrossRef] [Google Scholar]
Liu GB, Xiao D, Yao Y, et al. Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides. Chem Soc Rev 2015; 44: 2643-2663. [Article] [CrossRef] [PubMed] [Google Scholar]
Sung J, Zhou Y, Scuri G, et al. Broken mirror symmetry in excitonic response of reconstructed domains in twisted MoSe₂/MoSe₂ bilayers. Nat Nanotechnol 2020; 15: 750-754. [Article] [NASA ADS] [CrossRef] [PubMed] [Google Scholar]
Du L, Zhang T, Liao M. Temperature-driven evolution of critical points, interlayer coupling, and layer polarization in bilayer MoS₂. Phys Rev B 2017; 97: 165410[Article] [Google Scholar]
Chen P, Cheng C, Shen C. Band evolution of two-dimensional transition metal dichalcogenides under electric fields. Appl Phys Lett 2019; 115: 083104[Article] [NASA ADS] [CrossRef] [Google Scholar]
Leisgang N, Shree S, Paradisanos I, et al. Giant Stark splitting of an exciton in bilayer MoS₂. Nat Nanotechnol 2020; 15: 901-907. [Article] [NASA ADS] [CrossRef] [PubMed] [Google Scholar]
Sponfeldner L, Leisgang N, Shree S, et al. Capacitively-coupled and inductively-coupled excitons in bilayer MoS₂. arXiv: 2108.04248, 20212108.04248 [Google Scholar]
Ud Din N, Turkowski V, Rahman TS. Ultrafast charge dynamics and photoluminescence in bilayer MoS₂. 2D Mater 2021; 8: 025018. [Article] [Google Scholar]
Zhao W, Ribeiro RM, Toh M, et al. Origin of indirect optical transitions in few-layer MoS₂, WS₂, and WSe₂. Nano Lett 2013; 13: 5627-5634. [Article] [NASA ADS] [CrossRef] [PubMed] [Google Scholar]
Kozawa D, Kumar R, Carvalho A, et al. Photocarrier relaxation pathway in two-dimensional semiconducting transition metal dichalcogenides. Nat Commun 2014; 5: 4543. [Article] [NASA ADS] [CrossRef] [PubMed] [Google Scholar]
Hong J, Li K, Jin C, et al. Layer-dependent anisotropic electronic structure of freestanding quasi-two-dimensional MoS₂. Phys Rev B 2016; 93: 075440. [Article] [NASA ADS] [CrossRef] [Google Scholar]
Wakabayashi N, Smith HG, Nicklow RM. Lattice dynamics of hexagonal MoS₂ studied by neutron scattering. Phys Rev B 1975; 12: 659-663. [Article] [NASA ADS] [CrossRef] [Google Scholar]
Bhatnagar M, Woźniak T, Kipczak Ł, et al. Temperature induced modulation of resonant Raman scattering in bilayer 2H-MoS₂. arXiv: 2204.09034, 2022 [Google Scholar]
Mak KF, He K, Lee C, et al. Tightly bound trions in monolayer MoS₂. Nat Mater 2013; 12: 207-211. [Article] [CrossRef] [PubMed] [Google Scholar]
Ross JS, Wu S, Yu H, et al. Electrical control of neutral and charged excitons in a monolayer semiconductor. Nat Commun 2013; 4: 1474. [Article] [NASA ADS] [CrossRef] [PubMed] [Google Scholar]
Zhu B, Chen X, Cui X. Exciton binding energy of monolayer WS₂. Sci Rep 2015; 5: 9218. [Article] [NASA ADS] [CrossRef] [PubMed] [Google Scholar]
Liu HJ, Jiao L, Xie L, et al. Molecular-beam epitaxy of monolayer and bilayer WSe₂: a scanning tunneling microscopy/spectroscopy study and deduction of exciton binding energy. 2D Mater 2015; 2: 034004. [Article] [Google Scholar]
Jones AM, Yu H, Ghimire NJ, et al. Optical generation of excitonic valley coherence in monolayer WSe₂. Nat Nanotech 2013; 8: 634-638. [Article] [NASA ADS] [CrossRef] [PubMed] [Google Scholar]

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