Natl Sci Open
Volume 2, Number 4, 2023
Special Topic: Two-dimensional Materials and Devices
|Number of page(s)||12|
|Published online||01 June 2023|
Iodine-assisted ultrafast growth of high-quality monolayer MoS2 with sulfur-terminated edges
Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
2 Institute of Functional Porous Materials, School of Materials Science and Engineering, Zhejiang Sci-Tech University, Hangzhou 310018, China
3 International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan
4 Faculty of Materials Science and Engineering/Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
5 Shenyang National Laboratory for Materials Sciences, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
6 Advanced Technology Institute, University of Surrey, Guildford, Surrey GU2 7XH, UK
* Corresponding author (email: firstname.lastname@example.org)
Revised: 22 February 2023
Accepted: 5 March 2023
Two-dimensional (2D) semiconductors have attracted great attention to extend Moore’s law, which motivates the quest for fast growth of high-quality materials. However, taking MoS2 as an example, current methods yield 2D MoS2 with a low growth rate and poor quality with vacancy concentrations three to five orders of magnitude higher than silicon and other commercial semiconductors. Here, we develop a strategy of using an intermediate product of iodine as a transport agent to carry metal precursors efficiently for ultrafast growth of high-quality MoS2. The grown MoS2 has the lowest density of sulfur vacancies (~1.41×1012 cm−2) reported so far and excellent electrical properties with high on/off current ratios of 108 and carrier mobility of 175 cm2 V−1 s−1. Theoretical calculations show that by incorporating iodine, the nucleation barrier of MoS2 growth with sulfur-terminated edges reduces dramatically. The sufficient supply of precursor and low nucleation energy together boost the ultrafast growth of sub-millimeter MoS2 domains within seconds. This work provides an effective method for the ultrafast growth of 2D semiconductors with high quality, which will promote their applications.
Key words: 2D semiconductors / molybdenum disulfides / ultrafast growth / defect density / sulfur vacancy / iodine-assisted / sulfur-terminated edge
© The Author(s) 2023. Published by China Science Publishing & Media Ltd. and EDP Sciences.
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