Van der Waals epitaxy. (A) Schematic of graphene lattice-guided nitride film growth on amorphous substrates [63]. (B) Schematic of lattice mismatches between MoS₂, WS₂, h-BN, and graphene (Gr) with nitrides and grain rotation in the in-plane direction. (C) Diagram of the fabrication process of GaN epitaxial film by introducing Gr layers and ZnO nanowall [4]. (D) HAADF-STEM image of the interface and electron energy loss spectroscopy mappings of O, C, and N elements at the interface [66]. (E) High-resolution transmission electron microscopy (HRTEM) image of the interface of nitrides/Gr/glass [65]. (F) X-ray diffraction (XRD)-2θ scan spectrum of GaN film [65]. (G) Electron backscatter diffraction (EBSD) inverse pole figure (IPF) images of GaN films grown on Gr/glass [65]. (H) HRTEM images of two GaN grains with 10° and 29° relative rotations, respectively [65]. (I) HAADF-STEM image of the interface by introducing WS2 as a buffer layer [67]. (J) EBSD-IPF images of GaN films grown on WS2/glass in the Z-, X-, and Y-directions [67]. (K) XRD-φ scan of GaN from a probed area of 1 mm× 10 mm [67]. The scale bars in (E), (G), (H), and (J) are 5 nm, 1 μm, 5 nm, and 2 μm, respectively.