Table 3
Related reports utilizing van der Waals epitaxy
| Growth method | Substrate type | 2D materials | Epitaxial layer | Exfoliation | Ref. |
| MOCVD | Sapphire | Graphene | GaN/ZnO | Yes | [4] |
| MOVPE | Sapphire | h-BN | AlGaN, AlN | Yes | [5] |
| MOCVD | SiC | Graphene | GaN | Yes | [6] |
| MOCVD | Sapphire | Graphene | GaN/AlN | – | [37] |
| MOVPE | Sapphire | h-BN | AlN | Yes | [64] |
| MOCVD | Glass | Graphene | AlGaN | Yes | [65] |
| MOCVD | SiO2/Si | Graphene | GaN/AlN | – | [66] |
| MOCVD | Glass | WS2 | GaN/AlGaN | Yes | [67] |
| MOVPE | SiO2/Si | WS2 | GaN | Yes | [68] |
| MOVPE | SiO2/Si | WS2 | GaN | – | [69] |
| MOVPE | Si(100), Si(111) | Graphene | GaN | – | [70] |
| MOCVD | Sapphire | Graphene | GaN | – | [72] |
| MOCVD | SiO2 | Graphene | GaN/AlGaN | – | [73] |
| MOCVD | SiO2/Si | Graphene | GaN | Yes | [74] |
| MOCVD | SiO2/Si | Graphene | GaN/AlN | Yes | [75] |
| MOCVD | Glass | Graphene | GaN/AlN | – | [76] |
| MBE | Si(100) | Graphene | GaN | – | [77] |
| MBE | SiC(0001) | Graphene | GaN | – | [78] |
| MOCVD | Sapphire | Graphene | AlN | – | [79] |
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