2T1C DRAM based on semiconducting MoS2 and semimetallic graphene for in-memory computing

Special Topic: Two-dimensional Materials and Devices

Open Access

Figure 4

Implementation of multiplication operation. (A) Circuit diagram of current differential designed for the 2T1C DRAM. (B) Simulated I_out values as a function of the calculated V_w × V_x values. (C) Colormap of standard multiplication operation. (D) Colormap of I_out as a function of V_w and V_x.

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