A non-destructive channel stress characterization for gate-all-around nanosheet transistors by confocal Raman methodology

Open Access

Issue		Natl Sci Open Volume 2, Number 2, 2023


Article Number		20220027
Number of page(s)		9
Section		Information Sciences
DOI		https://doi.org/10.1360/nso/20220027
Published online		23 September 2022

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