Natl Sci Open
Volume 1, Number 3, 2022
Special Topic: Novel Optoelectronic Devices
|Number of page(s)||13|
|Published online||10 August 2022|
Direct laser writing of graphene oxide for ultra-low power consumption memristors in reservoir computing for digital recognition
Institute of Photonic Chips, University of Shanghai for Science and Technology, Shanghai
2 Centre for Artificial-Intelligence Nanophotonics, School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200090, China
Received: 10 March 2022
Revised: 12 April 2022
Accepted: 12 May 2022
A memristor is a promising candidate of new electronic synaptic devices for neuromorphic computing. However, conventional memristors often exhibit complex device structures, cumbersome manufacturing processes, and high energy consumption. Graphene-based materials show great potential as the building materials of memristors. With direct laser writing technology, this paper proposes a lateral memristor with reduced graphene oxide (rGO) and Pt as electrodes and graphene oxide (GO) as function material. This Pt/GO/rGO memristor with a facile lateral structure can be easily fabricated and demonstrates an ultra-low energy consumption of 200 nW. Typical synaptic behaviors are successfully emulated. Meanwhile, the Pt/GO/rGO memristor array is applied in the reservoir computing network, performing the digital recognition with a high accuracy of 95.74%. This work provides a simple and low-cost preparation method for the massive production of artificial synapses with low energy consumption, which will greatly facilitate the development of neural network computing hardware platforms.
Key words: direct laser writing / memristor array / graphene oxide / reservoir computing
© The Author(s) 2022. Published by China Science Publishing & Media Ltd. and EDP Sciences.
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