Issue |
Natl Sci Open
Volume 2, Number 4, 2023
Special Topic: Two-dimensional Materials and Devices
|
|
---|---|---|
Article Number | 20230015 | |
Number of page(s) | 18 | |
Section | Materials Science | |
DOI | https://doi.org/10.1360/nso/20230015 | |
Published online | 07 June 2023 |
REVIEW
Two-dimensional transition metal dichalcogenides for post-silicon electronics
1
Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
2
Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
* Corresponding authors (emails: zhangzheng@ustb.edu.cn (Zheng Zhang); yuezhang@ustb.edu.cn (Yue Zhang))
Received:
28
February
2023
Revised:
28
March
2023
Accepted:
6
April
2023
Rapid advancements in information technology push the explosive growth in data volume, requiring greater computing-capability logic circuits. However, conventional computing-capability improving technology, which mainly relies on increasing transistor number, encounters a significant challenge due to the weak field-effect characteristics of bulk silicon-based semiconductors. Still, the ultra-thin layered bodies of two-dimensional transition metal dichalcogenides (2D-TMDCs) materials enable excellent field-effect characteristics and multiple gate control ports, facilitating the integration of the functions of multiple transistors into one. Generally, the computing-capability improvement of the transistor cell in logic circuits will greatly alleviate the challenge in transistor numbers. In other words, one can only use a small number, or even just one, 2D-TMDCs-based transistors to conduct the sophisticated logic operations that have to be realized by using many traditional transistors. In this review, from material selection, device structure optimization, and circuit architecture design, we discuss the developments, challenges, and prospects for 2D-TMDCs-based logic circuits.
Key words: logic circuits / two-dimensional transition metal dichalcogenides / computing capability / post-silicon electronics / transistor number
© The Author(s) 2023. Published by China Science Publishing & Media Ltd. and EDP Sciences.
This is an Open Access article distributed under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.