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Electrical performance of a Pt/GO/rGO memristor. (A) Resistive switching behaviors of Pt/GO/rGO memristor; (B) resistive switching behavior of the Pt/GO/rGO memristor under different current compliance; (C) pulse switching characteristics. Electrical pulses (8 V,50 μs) with an interval of 1 μs were used. (D) Modulation of switching characteristics by different pulse duty cycles; (E) modulation of switching characteristics by different pulse numbers; (F) modulation of switching characteristics by different pulse amplitudes.
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